Introduction to Magnetic Random-Access Memory

Introduction to Magnetic Random-Access Memory

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.


Author
Publisher John Wiley & Sons
Release Date
ISBN 111900974X
Pages 264 pages
Rating 4/5 (40 users)

More Books:

Introduction to Magnetic Random-Access Memory
Language: en
Pages: 264
Authors: Bernard Dieny
Categories: Computers
Type: BOOK - Published: 2016-12-12 - Publisher: John Wiley & Sons

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpas
Introduction to Magnetic Random-Access Memory
Language: en
Pages: 264
Authors: Bernard Dieny
Categories: Science
Type: BOOK - Published: 2016-11-14 - Publisher: John Wiley & Sons

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpas
Nanoelectronics and Information Technology
Language: en
Pages: 1040
Authors: Rainer Waser
Categories: Computers
Type: BOOK - Published: 2012-05-29 - Publisher: John Wiley & Sons

This outstanding textbook provides an introduction to electronic materials and device concepts for the major areas of current and future information technology.
Concise Encyclopedia of Magnetic and Superconducting Materials
Language: en
Pages: 1360
Authors: K.H.J. Buschow
Categories: Technology & Engineering
Type: BOOK - Published: 2005-12-28 - Publisher: Elsevier

Magnetic and superconducting materials pervade every avenue of the technological world – from microelectronics and mass-data storage to medicine and heavy eng
Handbook of Advanced Magnetic Materials
Language: en
Pages: 448
Authors: David J. Sellmyer
Categories: Magnetic materials
Type: BOOK - Published: 2005 - Publisher: 清华大学出版社有限公司

Nanomagnetic Materials
Language: en
Pages: 812
Authors: Akinobu Yamaguchi
Categories: Science
Type: BOOK - Published: 2021-07-13 - Publisher: Elsevier

Nanomagnetic Materials: Fabrication, Characterization and Application explores recent studies of conventional nanomagnetic materials in spintronics, data storag
Spin Dynamics in Confined Magnetic Structures I
Language: en
Pages: 340
Authors: Burkard Hillebrands
Categories: Science
Type: BOOK - Published: 2003-07-01 - Publisher: Springer Science & Business Media

Introductory chapters help newcomers to understand the basic concepts, and the more advanced chapters give the current state of the art for most spin dynamic is
Frontiers of Multifunctional Nanosystems
Language: en
Pages: 485
Authors: Eugenia V. Buzaneva
Categories: Science
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

a
Handbook of Spin Transport and Magnetism
Language: en
Pages: 808
Authors: Evgeny Y. Tsymbal
Categories: Science
Type: BOOK - Published: 2016-04-19 - Publisher: CRC Press

In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fer
Electronics, Electrical Engineering and Information Science
Language: en
Pages: 1172
Authors: Jian Wang
Categories: Technology & Engineering
Type: BOOK - Published: 2016-03-07 - Publisher: World Scientific

This book consists of one hundred and seventeen selected papers presented at the 2015 International Conference on Electronics, Electrical Engineering and Inform